Solids And Fluids : Physics

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 Q.1. The type of bonding in Ge crystal is

A) Metallic

B) Ionic

C) Van der waal

D) Covalent.

Q.2. What are ripples?

A) A.C. output 

B) D.C. output

C) A.C. mixed with D.C. output 

D) None of these

Q.3. What accounts for flow of charge carriers in forward and reverse biasing of silicon P-n diode?

A) Drift in both forward and reverse bias

B) Drift in forward and diffusion in reverse bias

C) Drift in reverse bias and diffusion in forward bias

D) Diffusion in both forward and reverse bias.

Q.4. The base of a transistor serves a similar function as :

A) filament in triode

B) plate in triode

C) grid in triode

D) none of the above

Q.5. CuNi exhibits:

A) Covalent bonding 

B) Metallic bonding

C) Ionic n=bonding

D) Ionic and covalent bonding

Q.6. To produce N-type, crystal Ge or Si may be doped with a substance that is:

A) divalent

B) trivalent

C) tetravalent

D) pentavalent

Q.7. In n-p-n transistor , p-type crystal is:

A) emitter

B) collector

C) grid

D) base

Q.8. The potential barrier in the depletion layer is due to:

A) ions

B) electrons

C) holes

D) forbidden band 

Explanation-

Potential barrier is due to ions.

Q.9. Digital circuits can be made to be respective use of:

A) AND gates

B) OR gates

C) NOT gates

D) NAND gates

Q.10. For a transistor the current amplification factor is 0.8. If the transistor is now in common-emitter configuration , the change in collector current - emitter configuration , the change in collector current when the base current change by 6 mA is:

A) 6 mA

B) 4.8 mA

C) 24 mA

D) 8 mA

Explanation-